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NP82N04MUG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N04MUGandNP82N04NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=41A) ?Highcurrentrating ID(DC)=±82A ?Lowi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04NDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N04MDGandNP82N04NDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance RDS(on)1=4.2mΩMAX.(VGS=10V,ID=41A) RDS(on)2=8.5mΩMAX.(VGS=4.5V,ID=41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04NDG

isc N-Channel MOSFET Transistor

FEATURES DrainCurrent-ID=82A@TC=25℃ DrainSourceVoltage-VDSS=40V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N04NDG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N04MDGandNP82N04NDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance RDS(on)1=4.2mΩMAX.(VGS=10V,ID=41A) RDS(on)2=8.5mΩMAX.(VGS=4.5V,ID=41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04NLG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N04NUG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N04MUGandNP82N04NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=41A) ?Highcurrentrating ID(DC)=±82A ?Lowi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04NUG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N04NUG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N04MUGandNP82N04NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=41A) ?Highcurrentrating ID(DC)=±82A ?Lowi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04PDG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N04PUG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    NP8

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 82A I(D) | TO-262AA

供應商型號品牌批號封裝庫存備注價格
NEC
24+
TO-262
8866
詢價
NEC
6000
面議
19
TO-262
 詢價
NEC
TO-263
22+
6000
十年配單,只做原裝
 詢價
日本NEC
23+
TO-263
33000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
NEC
23+
TO-263
6000
原裝正品，支持實單
 詢價
NEC
22+
TO-263
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
NEC
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
1922+
TO-263
216
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
RENESAS/瑞薩
23+
TO-251
69820
終端可以免費供樣,支持BOM配單!
 詢價
RENESAS(瑞薩)/IDT
24+
7350
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!
 詢價
更多NP8供應商 更新時間2025-4-22 15:30:00

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