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NP80N06PLG-E1B-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06PLG-E2B-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N03KDF

MOS FIELD EFFECT TRANSISTOR

SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheNP82N03KDFisN-channelMOSFieldEffectTransistors designedforhighcurrentswitchingapplication. FEATURES ?Channeltemperature175°Crating ?Superlowon-stateresistanceand4.5Vgatedrivetype RDS(on)1=3.5mΩMAX.(VGS=10V,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N03PUG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04MDG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04MDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N04MDGandNP82N04NDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance RDS(on)1=4.2mΩMAX.(VGS=10V,ID=41A) RDS(on)2=8.5mΩMAX.(VGS=4.5V,ID=41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04MDG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N04MDGandNP82N04NDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance RDS(on)1=4.2mΩMAX.(VGS=10V,ID=41A) RDS(on)2=8.5mΩMAX.(VGS=4.5V,ID=41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N04MLG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04MUG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N04MUG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N04MUGandNP82N04NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=41A) ?Highcurrentrating ID(DC)=±82A ?Lowi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    NP8

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
TO-263
8866
詢價
NEC
6000
面議
19
TO-263
 詢價
NEC
19+
TO-263
32000
原裝正品,現(xiàn)貨特價
 詢價
NEC
23+
TO-220AB
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價
NEC
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢價
NEC
TO-263
22+
6000
十年配單,只做原裝
 詢價
NEC
23+
TO-263
33000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
NEC
22+
TO-263
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
NEC
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價
NEC
22+
TO-263
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
更多NP8供應(yīng)商 更新時間2025-4-22 15:30:00

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