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NP84N04KHE-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N04KHE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N04KHE-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N04KHE-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N04MHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N04MHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP84N04MHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N04MHE-S18-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N04MHE-S18-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N04NHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4410pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

供應(yīng)商型號品牌批號封裝庫存備注價格
UTC/友順
23+
TO-252
69820
終端可以免費供樣,支持BOM配單!
 詢價
RENESAS/瑞薩
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價
RENESAS/瑞薩
2022+
TO-263
50000
原廠代理 終端免費提供樣品
 詢價
R
23+
TO-263
6000
原裝正品，支持實單
 詢價
RENESAS/瑞薩
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價
RENESAS/瑞薩
23+
TO-263
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價
RENESAS/瑞薩
2022+
TO-263
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
RENESAS/瑞薩
22+
TO-263
12500
瑞薩全系列在售,終端可出樣品
 詢價
RENESAS/瑞薩
22+
TO-263
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
R
25+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多NP8供應(yīng)商 更新時間2025-4-23 13:52:00

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