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NP82N06ELD

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=8.5mW(MAX.)(VGS=10V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06ELD

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N06MLG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N06MLG

N-Channel 60 V (D-S) MOSFET

FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization:

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

NP82N06MLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06MLG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06NLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06NLG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP82N06NLG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06PDG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    NP8

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應商型號品牌批號封裝庫存備注價格
NATLINEAR/南麟
24+
DFN56
78848
原裝正品現(xiàn)貨供應
 詢價
NEC
24+
TO-263
8866
詢價
NEC
24+
SOT-263
5000
只做原裝公司現(xiàn)貨
 詢價
NEC
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
NEC
6000
面議
19
TO-263
 詢價
NEC
18+
TO-263
41200
原裝正品,現(xiàn)貨特價
 詢價
AVAGO/安華高
23+
SOP-12
69820
終端可以免費供樣,支持BOM配單!
 詢價
NEC
21+
SOT-263
10000
原裝現(xiàn)貨假一罰十
 詢價
RENESAS/瑞薩
2022+
TO-263
50000
原廠代理 終端免費提供樣品
 詢價
RENESAS/瑞薩
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價
更多NP8供應商 更新時間2025-4-23 17:10:00

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