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NP86N04CHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP86N04CHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04CHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=86A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP86N04CHE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP86N04CHE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04DHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=86A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP86N04DHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP86N04DHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04EHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP86N04EHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    NP86N04CHE

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
TO-220AB
8866
詢價
NEC
6000
面議
19
TO-220AB
 詢價
日本NEC
2023+
TO220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
TECCOR/LITT
23+
TO-220
69820
終端可以免費供樣,支持BOM配單!
 詢價
NEC
23+
TO-220
10000
公司只做原裝正品
 詢價
日本NEC
2022+
TO220
12888
原廠代理 終端免費提供樣品
 詢價
NEC
23+
TO-220
6000
原裝正品，支持實單
 詢價
NEC
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
NEC
24+
TO-TO-220
37650
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
VB
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
更多NP86N04CHE供應(yīng)商 更新時間2025-2-20 15:30:00

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