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NCV431BVDMR2G

Marking：NVB；Package：Micro8；Programmable Precision References

TheTL431A,Bintegratedcircuitsarethree?terminal programmableshuntregulatordiodes.ThesemonolithicICvoltage referencesoperateasalowtemperaturecoefficientzenerwhichis programmablefromVrefto36Vwithtwoexternalresistors.These devicesexhibitawideoperatingcurrentra

ONSEMION Semiconductor

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NVB072N65S3

Marking：NVB072N65S3；Package：D2PAK-3；MOSFET - Power, N-Channel, Automotive SUPERFET III, Easy-Drive 650 V, 72 m, 44 A

Description SuperFETIIIMOSFETisonsemi’sbrand?newhighvoltage super?junction(SJ)MOSFETfamilythatisutilizingchargebalance technologyforoutstandinglowon?resistanceandlowergatecharge performance.Thisadvancedtechnologyistailoredtominimize conductionlossprovidesuperi

ONSEMION Semiconductor

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NVB082N65S3F

Marking：NVB082N65S3F；Package：D2PAK；MOSFET - Power, Single N-Channel, D2PAK 650 V, 82 m, 40 A

Description SUPERFET?IIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper?junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon?resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pr

ONSEMION Semiconductor

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NVB095N65S3F

Marking：NVB095N65S3F；Package：D2PAK；MOSFET ??Power, N??hannel, SUPERFET III, FRFET 650 V, 36 A, 95 m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper?junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon-resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

ONSEMION Semiconductor

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NVB110N65S3F

Marking：NVB110N65S3F；Package：D2PAK；MOSFET ??Power, Single N-Channel, D2PAK 650 V, 110 m, 30 A

Description SUPERFET?IIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper?junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon?resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pr

ONSEMION Semiconductor

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NVB150N65S3F

Marking：NVB150N65S3F；Package：D2PAK；MOSFET - Power, Single N-Channel, D2PAK 650 V, 150 m, 24 A

Description SUPERFET?IIIMOSFETisonsemi’sbrand?newhighvoltage super?junction(SJ)MOSFETfamilythatisutilizingchargebalance technologyforoutstandinglowon?resistanceandlowergatecharge performance.Thisadvancedtechnologyistailoredtominimize conductionloss,providesupe

ONSEMION Semiconductor

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NVB190N65S3F

Marking：NVB190N65S3F；Package：D2PAK；MOSFET - Power 650 V, 190 m, 20 A, Single N-Channel, D2PAK

Description SUPERFET?IIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper?junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon?resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pr

ONSEMION Semiconductor

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NVBG020N120SC1

Marking：NVBG020120SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(typ.QG(tot)=220nC) ?LowEffectiveOutputCapacitance(typ.Coss=258pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondleve

ONSEMION Semiconductor

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NVBG040N120SC1

Marking：NVBG040120SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondleve

ONSEMION Semiconductor

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NVBGS6D5N15MC

Marking：NVBGS6D5N15；Package：D2PAK7；MOSFET - Power, Single N-Channel, D2PAK7 150 V, 7 m, 121 A

Features ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?LowersSwitchingNoise/EMI ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSCompliant TypicalApplications ?PowerTools,Battery

ONSEMION Semiconductor

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HARRIS
24+
SMD
1294
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O
24+
D2PAK
5000
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ON
23+
TO-263
11846
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1822+
TO263
9852
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三年內(nèi)
1983
只做原裝正品
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ON
18+
TO263
41200
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ON Semiconductor
21+
D2PAK-3(TO-263-3)
800
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Panduit Corp
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66
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SOT-263
20000
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115000
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