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PBRN113Z

NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113Z

NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 10 k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN113Z_SER

NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113ZK

Marking：G5；Package：SC-59A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113ZS

Marking：N113ZS；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113ZT

Marking：7L；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ZT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113ZT

Marking：7L；Package：SOT23；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113ZT-Q

Marking：7L；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ZT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113ZK

NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 10 k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN113ZS

NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 10 k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

詳細參數(shù)

  • 型號：

    PBRN113Z

  • 制造商：

    PHILIPS

  • 制造商全稱：

    NXP Semiconductors

  • 功能描述：

    NPN 800 mA, 40 V BISS RETs; R1 = 1 k?, R2 = 10 k?

供應商型號品牌批號封裝庫存備注價格
NXP
2016+
SOT-23
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
NXP
24+
6000
詢價
Nexperia
18+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
NXPSEMICONDUCTORS
23+
NA
3486
專做原裝正品,假一罰百!
 詢價
LINEAR/凌特
23+
MSOP8
69820
終端可以免費供樣,支持BOM配單!
 詢價
NXP
22+
SOP
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
Nexperia(安世)
2112+
SOT-23
115000
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
NEXPERIA
1809+
SOT23-3
6675
就找我吧!--邀您體驗愉快問購元件!
 詢價
NEXPERIA
21+
SOT-23
6000
原裝正品
 詢價
NXP
22+
NA
45000
加我QQ或微信咨詢更多詳細信息,
 詢價
更多PBRN113Z供應商 更新時間2025-2-6 22:58:00

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