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PBRN123ET-Q

40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN123Y

NPN800mA,40VBISSRETs;R1=2.2k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN123Y

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN123Y_SER

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN123YK

NPN800mA,40VBISSRETs;R1=2.2k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN123YK

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN123YS

NPN800mA,40VBISSRETs;R1=2.2k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN123YS

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN123YT

NPN800mA,40VBISSRETs;R1=2.2k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN123YT

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

詳細參數(shù)

  • 型號:

    PBRN123ET T/R

  • 功能描述:

    開關(guān)晶體管 - 偏壓電阻器 BISS RETS TAPE-7

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶體管極性:

    NPN/PNP

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    直流集電極/Base Gain hfe

  • Min:

    200 mA

  • 最大工作頻率:

    集電極—發(fā)射極最大電壓

  • VCEO:

    50 V

  • 集電極連續(xù)電流:

    150 mA

  • 功率耗散:

    200 mW

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
NEXPERIA
1809+
SOT23-3
6675
就找我吧!--邀您體驗愉快問購元件!
詢價
Nexperia
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
Nexperia USA Inc.
25+
TO-236-3 SC-59 SOT-23-3
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
PHILIPS/飛利浦
1535+
6000
詢價
PHILIPS
05+
SOT23
3000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
PHILIPS
23+
SOT23
5500
原廠原裝正品
詢價
PHILIPS
2023+
SMD
6000
安羅世紀電子只做原裝正品貨
詢價
PHILIPS
2023+
SOT23
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
詢價
NXP
22+
NA
45000
加我QQ或微信咨詢更多詳細信息,
詢價
Nexperia/安世
17+
SOT-23
3000
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十
詢價
更多PBRN123ET T/R供應(yīng)商 更新時間2021-9-14 10:50:00