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S-LBAS16TT1G

Silicon Switching Diode

FEATURE ●Wedeclarethatthematerialofproduct compliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC-Q101Qualified andPPAPCapable.

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

S-LBAS16TW1T1G

SURFACE MOUNT FAST SWITCHING DIODE

Features FastSwitchingSpeed Ultra-SmallSurfaceMountPackage ForGeneralPurposeSwitchingApplications HighConductance AlsoAvailableinLeadFreeVersion ●S-PrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AE

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

S-LBAS316T1G

High-speed diode

DESCRIPTION TheLBAS316T1isahigh-speedswitchingdiodefabricatedinplanartechnology,andencapsulatedintheSOD323(SC76)SMDplasticpackage. FEATURES ?UltrasmallplasticSMDpackage ?Highswitchingspeed:max.4ns ?Continuousreversevoltage:max.75V ?Repetitivepeakreverse

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

S-LBAS316T3G

High-speed diode

DESCRIPTION TheLBAS316T1isahigh-speedswitchingdiodefabricatedinplanartechnology,andencapsulatedintheSOD323(SC76)SMDplasticpackage. FEATURES ?UltrasmallplasticSMDpackage ?Highswitchingspeed:max.4ns ?Continuousreversevoltage:max.75V ?Repetitivepeakreverse

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

S-LBAS40BST5G

Schottky barrier diode

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection. WedeclarethatthematerialofproductcompliancewithRoHSrequirements. Features ●Lowforwardcurrent ●Guardringprotected ●Lowdiodecapacitance. ●S-PrefixforAutomotiveandOtherAppl

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

S-LBAS70BST1G

SCHOTTKY BARRIER DIODE

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable. WedeclarethatthematerialofproductcompliancewithRoHSrequirements. Features ●Lowforwardcurrent ●Highbreakdownvolta

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

S-LBAS70BST3G

SCHOTTKY BARRIER DIODE

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable. WedeclarethatthematerialofproductcompliancewithRoHSrequirements. Features ●Lowforwardcurrent ●Highbreakdownvolta

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

S-LBAS70BST5G

SCHOTTKY BARRIER DIODE

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable. WedeclarethatthematerialofproductcompliancewithRoHSrequirements. Features ●Lowforwardcurrent ●Highbreakdownvolta

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

S-LBAT30LT1G

SCHOTTKY BARRIER DIODE

●Features ExtremelyLowForwardVoltage0.3V(max)@IF=10mA S-PrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC-Q101 QualifiedandPPAPCapable. ●Construction Siliconepitaxialplanar ●Wedeclarethatthematerial

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

S-LBAT40-04LT1G

Schottky barrier diode

Features 1)Smallsurfacemountingtype. 2)UltralowVF(VF=0.5VTyp.at0.2A) 3)Highreliability. 4)Wedeclarethatthematerialofproduct compliancewithRoHSrequirements. 5)S-PrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;A

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

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更多S-L供應(yīng)商 更新時(shí)間2025-4-4 14:00:00