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S-LBAW156LT3G

Marking:52;Package:SOT-23;Surface Mount Low Leakge Diode

FEATURE ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability ●Wedeclarethatthematerialofproductcompliance withRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplications

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

S-LBAW56DW1T1G

Monolithic Dual Switching Diode

Features ?Wedeclarethatthematerialofproduct compliancewithRoHSrequirements. ?S-PrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC-Q101 QualifiedandPPAPCapable.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

S-LBAW56DW1T3G

Monolithic Dual Switching Diode

Features ?Wedeclarethatthematerialofproduct compliancewithRoHSrequirements. ?S-PrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC-Q101 QualifiedandPPAPCapable.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

S-LDAN222T1G

Common Cathode Silicon Dual Switching Diode

CommonCathodeSiliconDualSwitchingDiode ThisCommonCathodeSiliconEpitaxialPlanarDualDiodeisdesignedforuseinultrahighspeedswitchingapplications.ThisdeviceishousedintheSC–89packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspaceisataprem

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

S-LDAN222T1G

Common Cathode Silicon Dual Switching Diode

FEATURES ●FastTrr ●LowCD ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable.

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

S-LDSR01S30ST5G

Schottky Barrier Diode

1.FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable. ●Extremelysmallsurfacemountingtype.(DFN

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

S-LDTB113ELT1G

Bias Resistor Transistor

BiasResistorTransistor PNPSiliconSurfaceMountTransistor withMonolithicBiasResistorNetwork ?Features 1)Built-inbiasresistorsenabletheconfigurationofan invertercircuitwithoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsist

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

S-LDTB113ELT3G

Bias Resistor Transistor

BiasResistorTransistor PNPSiliconSurfaceMountTransistor withMonolithicBiasResistorNetwork ?Features 1)Built-inbiasresistorsenabletheconfigurationofan invertercircuitwithoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsist

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

S-LDTB113ZLT1G

Bias Resistor Transistor

BiasResistorTransistor PNPSiliconSurfaceMountTransistor withMonolithicBiasResistorNetwork ?Features 1)Built-inbiasresistorsenabletheconfigurationofan invertercircuitwithoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsist

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

S-LDTB113ZLT3G

Bias Resistor Transistor

BiasResistorTransistor PNPSiliconSurfaceMountTransistor withMonolithicBiasResistorNetwork ?Features 1)Built-inbiasresistorsenabletheconfigurationofan invertercircuitwithoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsist

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

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