| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：S30；1 A very low dropout fast transient ultra-low noise linear regulator Description TheLD56100highaccuracyvoltageregulatorprovides1Aofcurrentfromaninput voltagerangingfrom1.8Vto5.5V,withatypicaldropoutvoltageof120mV. ItisavailableinDFN8(1.2x1.6mm)package,allowingthemaximumspacesaving. Thedeviceisstabilizedwithacerami | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Marking：S3011TE；Package：PG-TO252-5；Smart Low-Side Power Switch Features ?Singlechanneldevice ?DigitalFeedback ?Currentlimitationtriggerconcept ?3.3and5Vcompatiblelogicinputs ?Electrostaticdischargeprotection(ESD) ?GreenProduct(RoHScompliant) ?AECQualified | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：S3050EJ；Package：PG-TDSO8-31；Smart Low-Side Power Switch BasicFeatures ?Singlechanneldevice ?VerylowoutputleakagecurrentinOFFstate ?Electrostaticdischargeprotection(ESD) ?Embeddedprotectionfunctions(seebelow) ?ELVcompliantpackage ?GreenProduct(RoHScompliant) ?AECQualified | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：S301NZ；Package：SC-73；12 V, 5.8 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
Marking：S301PZ；Package：SC-73；12 V, 5.7 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
Marking：S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS302PZ 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorcur | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
Marking：S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorcurrentgain(hFE)athighIC | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
Marking：S302PZ；Package：SC-73；20 V, 5.5 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
Marking：S302PZ；Package：SOT223；20 V, 5.5 A PNP low VCEsat transistor 1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS302NZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
Marking：S303NZ；Package：SC-73；30 V, 5.5 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
- 封裝形式：
- 極限工作電壓：
33V
- 最大電流允許值：
4A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
- 可代換的型號(hào)：
3DK106B,
- 最大耗散功率：
65W
- 放大倍數(shù)：
- 圖片代號(hào)：
NO
- vtest：
33
- htest：
999900
- atest：
4
- wtest：
65
詳細(xì)參數(shù)
- 型號(hào)：
S30
- 制造商：
NOGA
- 功能描述：
DEBURRING BLADE PK10
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
XG |
13+ |
DIP |
20048 |
原裝分銷 |
詢價(jià) | ||
AMCC |
24+/25+ |
1260 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
AMCC |
24+ |
TSOP20 |
2568 |
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨 |
詢價(jià) | ||
AMCC |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢價(jià) | ||
24+ |
TO-247 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | |||
TI/德州儀器 |
22+ |
BGA |
10000 |
代理原裝現(xiàn)貨價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
AMCC |
24+ |
QFP |
6868 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
MW |
24+ |
原廠封裝 |
3500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
JST |
2021+ |
2.0mm |
285000 |
專供連接器,軍工合格供應(yīng)商! |
詢價(jià) | ||
AMCC |
19+ |
QFP64 |
7791 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) |
