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SIHB15N80AE

E Series Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

HMS15N80F

N-ChannelSuperJunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IXFC15N80Q

HiPerFETISOPLUS220MOSFETQ-ClassElectricallyIsolatedBackSurface

IXYS

IXYS Corporation

IXFC15N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH15N80

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXFH15N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH15N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH15N80Q

HiPerFETPowerMOSFETsQ-Class

Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastswitching ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFR15N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR15N80Q

HiPerFETPowerMOSFETsISOPLUS247QClass

HiPerFET?PowerMOSFETsISOPLUS247?QClass(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -

IXYS

IXYS Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
VISHAY(威世)
23+
TO263
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
VISHAY/威世通
20+
TO-263
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
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VISHAY/威世
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VISHAY/威世
23+
TO-263
10000
公司只做原裝正品
 詢價(jià)
VISHAY/威世
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VISHAY/威世
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
VISHAY/威世
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
VISHAY/威世
TO-263
22+
6000
十年配單,只做原裝
 詢價(jià)
VISHAY/威世
22+
TO-263
100000
代理渠道/只做原裝/可含稅
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VISHAY/威世
23+
NA/
26050
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
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更多SIHB15N80AE供應(yīng)商 更新時(shí)間2025-2-12 16:42:00

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