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STGD18N40LZ

EAS 180 mJ - 400 V - internally clamped IGBT

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgate-emitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGD18N40LZ

EAS 180 mJ - 400 V - internally clamped IGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGD18N40LZ

EAS 180 mJ - 390 V - internally clamped IGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGD18N40LZ-1

EAS 180 mJ - 400 V - internally clamped IGBT

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgate-emitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGD18N40LZT4

Marking：GD18N40LZ；Package：DPAK；Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESHtechnology optimizedforcoildrivingintheharshenvironmentofautomotiveignitionsystems. Thedeviceshowverylowon-statevoltageandveryhighSCISenergycapabilityover awideoperatingtemperaturerange.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGD18N40LZT4

EAS 180 mJ - 400 V - internally clamped IGBT

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgate-emitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGD18N40LZ-1

EAS 180 mJ - 400 V - internally clamped IGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGD18N40LZ-1

EAS 180 mJ - 390 V - internally clamped IGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGD18N40LZT4

EAS 180 mJ - 400 V - internally clamped IGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGD18N40LZT4

EAS 180 mJ - 390 V - internally clamped IGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細參數(shù)

  • 型號：

    STGD18N40LZ

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    EAS 180 mJ - 390 V - internally clamped IGBT

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
24+
TO-252
5000
只做原裝公司現(xiàn)貨
 詢價
ST全系列
22+23+
DPAKIPAK
26243
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
ST
22+
TO-252
102561
原裝正品現(xiàn)貨,可開13點稅
 詢價
ST
1926+
DPAKIPAK
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
ST/意法
24+
TO-252
15461
原裝現(xiàn)貨實單支持
 詢價
STM原廠目錄
24+
DPAK;IPAK
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持
 詢價
ST/意法
23+
IPAKTO-251TO252
10000
公司只做原裝正品
 詢價
ST/意法
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多STGD18N40LZ供應(yīng)商 更新時間2025-2-19 10:20:00

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