STP80NS04Z

N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

DESCRIPTION ThisfullyclampedMosfetisproducedbyusingthelatestadvancedCompany’sMeshOverlayprocesswhichisbasedonanovelstriplayout. Theinherentbenefitsofthenewtechnologycoupledwiththeextraclampingcapabilitiesmakethisproductparticularlysuitablefortheharshest

STP80NS04ZB

N-CHANNEL CLAMPED 7.5mohm - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

DESCRIPTION ThisfullyclampedMosfetisproducedbyusingthelatestadvancedCompany’sMeshOverlayprocesswhichisbasedonanovelstriplayout. Theinherentbenefitsofthenewtechnologycoupledwiththeextraclampingcapabilitiesmakethisproductparticularlysuitablefortheharshest

STP80PF55

P-CHANNEL 55V - 0.016 ohm - 80A TO-220 STripFET??II POWER MOSFET

Description ThesePowerMOSFETsarethelatestdevelopmentofSTMicroelectronicsuniquesinglefeaturesizestrip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsallowingremarka

STP80PF55

P-channel 55V - 0.016廓 - 80A - TO-220 - D2PAK STripFET??II Power MOSFET

Description ThisPowerMOSFETisthelaestdevelopmentofSTMicroelectronicsunique“Singlefeaturesize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STP80PF55

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=-80A@TC=25℃ ·DrainSourceVoltage :VDSS=-55V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

STP8444

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-220andTO-263Package.

STP85N15F4

Marking：85N15F4；Package：TO-220；N-channel 150 V, 0.015 Ω, 85 A TO-220, D2PAK STripFET? DeepGATE? Power MOSFET

Features ■Exceptionaldv/dtcapability ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisPowerMOSFETisamongthelatest developmentsthatuseanadvancedtechnology (STripFET?DeepGATE?technology),which hasbeenes

STP85N15F4

Marking：85N15F4；Package：TO-220；N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET? DeepGATE? Power MOSFET

Features ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisSTripFET?DeepGATE?PowerMOSFET technologyisamongthelatestimprovements, whichhavebeenespeciallytailoredtominimize on-stateresistance,withanewgat

STP85N15F4_V01

N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET? DeepGATE? Power MOSFET

Features ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisSTripFET?DeepGATE?PowerMOSFET technologyisamongthelatestimprovements, whichhavebeenespeciallytailoredtominimize on-stateresistance,withanewgat

STP85N3LH5

N-channel 30 V, 0.0042 廓 , 80 A, DPAK, TO-220, IPAK STripFET??V Power MOSFET

Description Thisproductutilizesthe5thgenerationofdesignrulesofST’sproprietarySTripFETTMtechnology.ThelowestavailableRDS(on)*Qg,inthestandardpackages,makesthisdevicesuitableforthemostdemandingDC-DCconverterapplications,wherehighpowerdensityistobeachieved. F