STP85NF3LL

N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION ThisapplicationspecificPowerMOSFETisthethirdgenarationofSTMicroelectronicsunique“SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsthebesttrade-offbetweenon-resistanceandgatecharge.Whenusedashighandlowsideinbuckregulators,itgives

STP85NF3LL

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=85A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STP85NF55

N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka

STP85NF55

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STP85NF55_V01

Marking：P85NF55；Package：TO-220；Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET? II Power MOSFETs in D2PAK and TO-220 packages

Features ?AEC-Q101qualified ?Exceptionaldv/dtcapability ?100avalanchetested ?Lowgatecharge Applications ?Switchingapplications Description ThesePowerMOSFETshavebeendevelopedusingSTMicroelectronics’unique STripFETprocess,whichisspecificallydesignedtominimize

STP85NF55L

N-CHANNEL 55V - 0.0060 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniquesinglefeaturesizestrip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkable

STP85NF55L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STP8N120K5

Marking：8N120K5；Package：TO-220；N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-220 package

Features ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh?K5 technology

STP8N65M5

N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STP8N80K5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=950mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.