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AD8351-EVAL

LowDistortionDifferentialRF/IFAmplifier

GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

AD8351-EVALZ

LowDistortionDifferentialRF/IFAmplifier

FEATURES?3dBbandwidthof2.2GHzforAV=12dBSingleresistorprogrammablegain:0dB≤AV≤26dBDifferentialinterfaceLownoiseinputstage2.7nV/√HzatAV=10dBLowharmonicdistortion ?79dBcsecondat70MHz ?81dBcthirdat70MHzOIP3of31dBmat70MHzSingle-supplyoperation:

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

DRV8351DIMPWTSEP

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features ?40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V ?TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

TITexas Instruments

德州儀器美國德州儀器公司

DRV8351DMPWTSEP

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features ?40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V ?TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

TITexas Instruments

德州儀器美國德州儀器公司

DRV8351-SEP

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features ?40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V ?TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

TITexas Instruments

德州儀器美國德州儀器公司

DRV8351-SEPD

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features ?40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V ?TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

TITexas Instruments

德州儀器美國德州儀器公司

DRV8351-SEPDI

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features ?40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V ?TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

TITexas Instruments

德州儀器美國德州儀器公司

ESD8351

ESDProtectionDiodesLowCapacitanceESDProtectionDiodeforHighSpeedDataLine

TheESD8351SeriesESDprotectiondiodesaredesignedtoprotect highspeeddatalinesfromESD.Ultra?lowcapacitanceandlowESD clampingvoltagemakethisdeviceanidealsolutionforprotecting voltagesensitivehighspeeddatalines. Features ?LowCapacitance(0.55pFMax,I/OtoGND)

ONSEMION Semiconductor

安森美半導體安森美半導體公司

ESD8351

ESD8118MUTAG

ONSEMION Semiconductor

安森美半導體安森美半導體公司

ESD8351

ESDProtectionDiodes

ONSEMION Semiconductor

安森美半導體安森美半導體公司

詳細參數(shù)

  • 型號:

    T8351B

  • 制造商:

    MOLEX

  • 制造商全稱:

    Molex Electronics Ltd.

  • 功能描述:

    Terminator Die

供應商型號品牌批號封裝庫存備注價格
ST
2447
SOT252
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
ST/意法
23+
SOT252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ST
SOT252
22+
6000
十年配單,只做原裝
詢價
ST/意法
23+
NA/
5750
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價
ST
22+
SOT252
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
ST/意法
23+
SOT252
8000
只做原裝現(xiàn)貨
詢價
ST
24+
SOT252
56000
公司進口原裝現(xiàn)貨 批量特價支持
詢價
ST
20+
SOT252
25000
全新原裝現(xiàn)貨 假一賠十
詢價
ST
24+
SOT252
200000
原裝進口正口,支持樣品
詢價
ST
17+
TO-252
6200
詢價
更多T8351B供應商 更新時間2025-3-30 15:00:00