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TC518129BFWL

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129B-Visa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129B-V utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129B-Voperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129BFWL

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129BFWL-10

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129BFWL-10L

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129BFWL-10V

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129B-Visa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129B-V utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129B-Voperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129BFWL-70

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129BFWL-70L

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129BFWL-70V

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129B-Visa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129B-V utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129B-Voperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129BFWL-80

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129BFWL-80L

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
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2
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24+
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2700
全新原裝自家現(xiàn)貨優(yōu)勢(shì)!
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TOSHIBA
22+
DIP
8200
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09+
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5500
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TOSHIBA
9527+
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780
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50000
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20+
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814
進(jìn)口原裝現(xiàn)貨,假一賠十
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TOSHIBA
21+
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780
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TOSHIBA/東芝
23+
SOP-32
11200
原廠(chǎng)授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
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1998
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230
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更多TC518129BFWL供應(yīng)商 更新時(shí)間2025-5-17 15:30:00

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