TDG100E90BEP中文資料TELEDYNE數(shù)據(jù)手冊PDF規(guī)格書

Features

?100 V enhancement mode GaN power switch?Bottom-side cooled configuration?RDS(on) = 7 mΩ?IDS(max) = 90 A?Ultra-low FOM Island Technology? die?Low inductance GaNPX? package?Easy gate drive requirements (0 V to 6 V)?Transient tolerant gate drive (-20 V / +10 V)?Very high switching frequency (> 100 MHz)?Reverse current capability?Zero reverse recovery loss?Small 7.6 x 4.6 mm2 PCB footprint?Source Sense (SS) pin for optimized gate drive?Single diffusion lot available?RoHS compliant?Enhanced wafer level reliability?HiRel qualification flow?Obsolescence support

Applications

?High efficiency power conversio

?High density power conversion

?ac-dc Converters

?Bridgeless Totem Pole PFC

?ZVS Phase Shifted Full Bridge

?Half & Full Bridge topologies

?Synchronous Buck or Boost

?Uninterruptable Power Supplies

?Motor Drives

?Single and 3Φ inverter legs

?Solar and Wind Power

?Fast Battery Charging

?dc-dc Converters

?On Board Battery Chargers

?E-Switch

Description

The TDG100E90BEP is an enhancement mode GaN-on-silicon power transistor based on GaN Systems Technology. The properties of GaN ensure high current, high voltage breakdown combined with high switching frequency. GaN Systems implements patented Island Technology? cell layout for high-current performance.

GaNPX? packaging is designed for very low parasitic inductance in the smallest possible footprint. The TDG100E90BEP is a bottom-side cooled transistor that offers very low junction-to- case thermal resistance for demanding high power applications. These features combined

provide very high efficiency power switching.