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TP65H150G4LSG

650V SuperGaN GaN FET in PQFN (source tab)

Description TheTP65H150G4LSG650V,150mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN?platformusesadvancedepiandpatented

TRANSPHORM

Transphorm

TP65H150G4LSGB

650V SuperGaN? GaN FET in PQFN (source tab)

Description TheTP65H150G4LSGB650V,150mΩGalliumNitride (GaN)FETisanormally-offdeviceusingTransphorm’sGen IVplatform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN?platfor

TRANSPHORM

Transphorm

TP65H150G4LSGB-TR

650V SuperGaN? GaN FET in PQFN (source tab)

Description TheTP65H150G4LSGB650V,150mΩGalliumNitride (GaN)FETisanormally-offdeviceusingTransphorm’sGen IVplatform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN?platfor

TRANSPHORM

Transphorm

TP65H150G4LSG-TR

650V SuperGaN GaN FET in PQFN (source tab)

Description TheTP65H150G4LSG650V,150mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN?platformusesadvancedepiandpatented

TRANSPHORM

Transphorm

TP65H150G4PS

650V SuperGaN? GaN FET in TO-220 (source tab)

Description TheTP65H150G4PS650V,150mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN?platformusesadvancedepiandpatented

TRANSPHORM

Transphorm

TP65H300G4JSGB

650V SuperGaN? GaN FET in PQFN (source tab)

Description TheTP65H300G4JSGB650V,240mΩGalliumNitride(GaN) FETisanormally-offdeviceusingTransphorm’sGenIV platform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN?platfor

TRANSPHORM

Transphorm

TP65H300G4JSGB-TR

650V SuperGaN? GaN FET in PQFN (source tab)

Description TheTP65H300G4JSGB650V,240mΩGalliumNitride(GaN) FETisanormally-offdeviceusingTransphorm’sGenIV platform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN?platfor

TRANSPHORM

Transphorm

TP65H300G4LSG

650V SuperGaN? FET in PQFN (source tab)

Description TheTP65H300G4LSG650V,240mΩgalliumnitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN?platformus

TRANSPHORM

Transphorm

TP65H300G4LSGB

650V SuperGaN? GaN FET in PQFN (source tab)

Description TheTP65H300G4LSGB650V,240mΩGalliumNitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN?platformus

TRANSPHORM

Transphorm

TP65H300G4LSGB-TR

650V SuperGaN? GaN FET in PQFN (source tab)

Description TheTP65H300G4LSGB650V,240mΩGalliumNitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN?platformus

TRANSPHORM

Transphorm

詳細參數(shù)

  • 型號：

    TP6

  • 制造商：

    GREATECS

  • 制造商全稱：

    GREATECS

  • 功能描述：

    6 x 3.5 mm Tactile Switches

供應商型號品牌批號封裝庫存備注價格
TENX
13+
LQFP-48
1339
原裝分銷
 詢價
ON
11+
TO220
8000
全新原裝,絕對正品現(xiàn)貨供應
 詢價
TI
24+
BGA
2500
自己現(xiàn)貨
 詢價
TOPRO
2020+
QFP
110
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
TOPRO
24+
QFP
6232
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
TOSHIBA
24+
SOP-4
3500
原裝現(xiàn)貨,可開13%稅票
 詢價
TENX
24+
HSOP28
2500
原裝現(xiàn)貨熱賣
 詢價
TOPRO
2016+
LQFP44
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
TOPRO
24+
QFP
4897
絕對原裝!現(xiàn)貨熱賣!
 詢價
N/A
24+
SSOP
5000
只做原裝公司現(xiàn)貨
 詢價
更多TP6供應商 更新時間2025-4-21 9:01:00

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