| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtr | IRF International Rectifier | IRF | ||
P-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.9A) DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD- | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-N+R
- 性質(zhì)：
表面帖裝型 （SMD）_開關(guān)管 （SW）
- 封裝形式：
貼片封裝
- 極限工作電壓：
50V
- 最大電流允許值：
0.1A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
DTC144TE,
- 最大耗散功率：
0.4W
- 放大倍數(shù)：
- 圖片代號：
H-15
- vtest：
50
- htest：
999900
- atest：
0.1
- wtest：
0.4
詳細參數(shù)
- 型號：
UN9210
- 制造商：
PANASONIC
- 制造商全稱：
Panasonic Semiconductor
- 功能描述：
Silicon NPN epitaxial planer transistor
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Panasonic/松下 |
24+ |
SOT-523 |
9400 |
新進庫存/原裝 |
詢價 | ||
Panasonic |
25+23+ |
Sot-423 |
31587 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
Panasonic/ |
2022 |
SOT-523 |
9400 |
全新原裝現(xiàn)貨熱賣 |
詢價 | ||
PANASONIC |
03+PB |
SOT23 |
3400 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
PANASONIC |
24+ |
SOT-523 |
4897 |
絕對原裝!現(xiàn)貨熱賣! |
詢價 | ||
PANASONIC |
1701+ |
? |
6500 |
只做原裝進口,假一罰十 |
詢價 | ||
PANASONIC |
2018+ |
SOT523 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價 | ||
PANASONIC |
17+ |
SOT23 |
9988 |
只做原裝進口,自己庫存 |
詢價 | ||
SOT-423 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
PANASONIC |
20+ |
SOT523 |
49000 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 |
