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UPA2723UT1A

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2723UT1AisN-channelMOSFETdesignedforlowsidedevice ofsynchronousrectifierDC/DCconverter. FEATURES ?Lowon-stateresistance RDS(on)1=2.5mΩMAX.(VGS=10V,ID=17A) RDS(on)2=3.5mΩMAX.(VGS=4.5V,ID=17A) ?Thintypesurfacemountpackagewithhe

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2723UT1A

N-Channel 30 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

UPA2723UT1A-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2723UT1AisN-channelMOSFETdesignedforlowsidedevice ofsynchronousrectifierDC/DCconverter. FEATURES ?Lowon-stateresistance RDS(on)1=2.5mΩMAX.(VGS=10V,ID=17A) RDS(on)2=3.5mΩMAX.(VGS=4.5V,ID=17A) ?Thintypesurfacemountpackagewithhe

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2723UT1A-E1-AZ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2723UT1AisN-channelMOSFETdesignedforlowsidedevice ofsynchronousrectifierDC/DCconverter. FEATURES ?Lowon-stateresistance RDS(on)1=2.5mΩMAX.(VGS=10V,ID=17A) RDS(on)2=3.5mΩMAX.(VGS=4.5V,ID=17A) ?Thintypesurfacemountpackagewithhe

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2723UT1A-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2723UT1AisN-channelMOSFETdesignedforlowsidedevice ofsynchronousrectifierDC/DCconverter. FEATURES ?Lowon-stateresistance RDS(on)1=2.5mΩMAX.(VGS=10V,ID=17A) RDS(on)2=3.5mΩMAX.(VGS=4.5V,ID=17A) ?Thintypesurfacemountpackagewithhe

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2723UT1A-E2-AZ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2723UT1AisN-channelMOSFETdesignedforlowsidedevice ofsynchronousrectifierDC/DCconverter. FEATURES ?Lowon-stateresistance RDS(on)1=2.5mΩMAX.(VGS=10V,ID=17A) RDS(on)2=3.5mΩMAX.(VGS=4.5V,ID=17A) ?Thintypesurfacemountpackagewithhe

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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更多UPA2723UT1A供應(yīng)商 更新時(shí)間2025-3-22 9:38:00

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