IPTG063N15NM5

Marking：063N15N5；Package：PG-HSOG-8；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

IQD063N15NM5

Marking：06315N5；Package：PG-TSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100%avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 ?Verylowreverserecoverycharge(Qrr)

IQD063N15NM5CG

Marking：06315NC；Package：PG-TTFN-9；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?Verylowreverserecoverycharge(Qrr) ?Superiorthermalresistance ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

IQE065N10NM5

Marking：06510N5；Package：PG-TSON-8-4；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

IQE065N10NM5CG

Marking：06510C5；Package：PG-TTFN-9-1；OptiMOSTM 5 Power-Transistor, 100 V

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

ISC0604NLS

Marking：0604NLS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features ?OptimizedforhighperformanceSMPS,e.g.synchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel,logiclevel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

ISC0605NLS

Marking：0605NLS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features ?OptimizedforhighperformanceSMPS,e.g.synchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel,logiclevel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

ISC060N10NM6

Marking：060N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

ISL9206ADRTZ-T

Marking：06A；Package：TDFN；FlexiHash? For Battery Authentication

Features ?Challenge-responsebasedauthenticationschemeusing 32-Bitchallengecodeand8-Bitauthenticationcode. ?Fastandflexibleauthenticationprocess.Multi-pass authenticationcanbeusedtoachievethehighestsecurity levelifnecessary. ?16x8OTPROMstoresuptothreesetsof

ISL9206DRZ-T

Marking：06Z；Package：TDFN；FlexiHash? For Battery Authentication

Features ?Challenge-responsebasedauthenticationschemeusing 32-Bitchallengecodeand8-Bitauthenticationcode. ?Fastandflexibleauthenticationprocess.Multi-pass authenticationcanbeusedtoachievethehighestsecurity levelifnecessary. ?16x8OTPROMstoresuptothreesetsof