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IPD068N10N3G

Marking：068N10N；Package：TO-252；100V N-Channel MOSFET

Features ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Idealforhigh-frequencyswitchingandsynchronousrectification ?(VGS=10V) ?VDS(V)=100V ?ID=90A ?RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

IPD068P03L3G

Marking：068P03L；Package：TO-252；-30V P-Channel MOSFET

Features ?QualifiedaccordingJEDEC1)fortarget ?175°Coperatingtemperature ?100Avalanchetested ?Pb-free;RoHScompliant,halogenfree ?applications:powermanagement

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

IPD068P03L3G-TP

Marking：068P03L；Package：TO-252；P-Channel Enhancement Mode MOSFET

Features ?Vos=30V.5=B0A @Reso=8ma@Ves=-10v ?Ro11mO@Vos=45V.

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

IPF067N20NM6

Marking：067N20N6；Package：PG-TO263-7；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI06N03LA

Marking：06N03LA；Package：TO-263-3；OptiMOS 2 Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?N-channel ?Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?175°Coperatingtemperature ?dv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP069N20NM6

Marking：069N20N6；Package：PG-TO220-3；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP06N03LA

Marking：06N03LA；Package：TO-220-3-1；OptiMOS 2 Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?N-channel ?Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?175°Coperatingtemperature ?dv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPT063N15N5

Marking：063N15N5；Package：PG-HSOF-8；OptiMOSTM 5 Power-Transistor, 150 V

Features ?N-channel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPT067N20NM6

Marking：067N20N6；Package：PG-HSOF-8；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPTC063N15NM5

Marking：063N15N5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    06

  • 制造商：

    Kyocera

  • 功能描述：

    KED06 1742 04 TOOL

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10000
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0805
63200
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10000
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2073
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6680
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2013
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500
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2022+
7600
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100500
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更多06供應商 更新時間2025-4-11 10:30:00

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