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IMBG120R034M2H

Marking：12M2H034；Package：PG-TO263-7-U01；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=43AatTC=100°C ?RDS(on)=34mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R040M2H

Marking：12M2H040；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=36AatTC=100°C ?RDS(on)=39.6mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R053M2H

Marking：12M2H053；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=29AatTC=100°C ?RDS(on)=52.6mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R078M2H

Marking：12M2H078；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=21AatTC=100°C ?RDS(on)=78.1mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R116M2H

Marking：12M2H234；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=15AatTC=100°C ?RDS(on)=115.7mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstpara

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R181M2H

Marking：12M2H181；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=10.5AatTC=100°C ?RDS(on)=181.4mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstpa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R234M2H

Marking：12M2H234；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=6.2AatTC=100°C ?RDS(on)=233.9mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstpar

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R007M1H

Marking：12M1H007；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDCC=225AatTvj=25°C ?RDS(on)=7mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltagecanbeapplied ?Robustbodydiodefor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R014M1H

Marking：12M1H014；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDCC=127AatTvj=25°C ?RDS(on)=14mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltagec

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R020M1H

Marking：12M1H020；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDCC=98AatTvj=25°C ?RDS(on)=19mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    12M

  • 功能描述：

    _

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進(jìn)口原裝
23+
SMD
40679
全新原裝現(xiàn)貨,專業(yè)代理熱賣
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2020+
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
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ON/安森美
23+
SOT23-3
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
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原廠原裝
13+
4990
原裝分銷
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IR
100
原裝現(xiàn)貨,價(jià)格優(yōu)惠
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美晶
15+
XTAL_3225
10000
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大可以發(fā)貨
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GEN
24+/25+
23
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
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CEM
24+
SMD-8
50000
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IR
24+
DO-4
6980
原裝現(xiàn)貨,可開13%稅票
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N
24+
DO
3000
原裝現(xiàn)貨假一罰十
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更多12M供應(yīng)商 更新時(shí)間2025-3-31 16:29:00

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