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2SC5435

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5435,2SC5800) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,?S21e?2=11.0dBTYP.@VCE=3V,IC=10mA,f=2GHz

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5435

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5435,2SC5786) Q1:High-gaintransistor fT=12.0GHzTYP.,?S21e?2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Lowphasedi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5435

NPN SILICON SiGe RF TWIN TRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD(1007PKG) FEATURES ?2differentbuilt-intransistors(2SC5435,NESG2107M33) Q1:Highgaintransistor fT=12.0GHzTYP.,?S21e?2=11dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5435

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5435,2SC5600) Q1:Built-inhigh-gaintransistor fT=12.0GHzTYP.,?S21e?2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Bui

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5435-T1

NPN SILICON RF TRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION FLAT-LEAD3-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES ?Containssamechipas2SC5010 ?Flat-lead3-pinthin-typeultrasuperminimoldpackage

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5436

NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURE ?Ultrasupermini-moldthinflatpackage (1.4mm×0.8mm×0.59mm:TYP.) ?Containssamechipas2SC5186

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC5436

NPN SILICON RF TRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION FLAT-LEAD3-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES ?Containssamechipas2SC5186 ?Flat-lead3-pinthin-typeultrasuperminimoldpackage

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5436

NPN SILICON SiGe RF TWIN TRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD(1007PKG) FEATURES ?2differentbuilt-intransistors(2SC5436,NESG2107M33) Q1:Highgaintransistor fT=12GHzTYP.,?S21e?2=9.0dBTYP.@VCE=1V,IC=10mA,f=2GHz Q2:Built-inlo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5436

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5436,2SC5786) Q1:High-gaintransistor fT=12.0GHzTYP.,?S21e?2=9.0dBTYP.@VCE=1V,IC=10mA,f=2GHz Q2:Lowphasedi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5436

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5436,2SC5800) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,?S21e?2=9.0dBTYP.@VCE=1V,IC=10mA,f=2GHz Q2:Bui

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

晶體管資料

  • 型號:

    2SC5404

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質:

    行輸出 (HA)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    1500V

  • 最大電流允許值:

    9A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BU2520AF,BUH715,2SC4542,2SC4759,

  • 最大耗散功率:

    50W

  • 放大倍數(shù):

  • 圖片代號:

    B-70

  • vtest:

    1500

  • htest:

    999900

  • atest:

    9

  • wtest:

    50

供應商型號品牌批號封裝庫存備注價格
PANASONIC
16+
TO-3P
10000
全新原裝現(xiàn)貨
詢價
TOSHIBA
24+
TO-3P(H)IS
8858
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
TOS
24+
原廠封裝
5500
原裝現(xiàn)貨假一罰十
詢價
TOS
1738+
TO-3P
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
詢價
ISC
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
TOSHIBA/東芝
2022+
14
全新原裝 貨期兩周
詢價
TOSHIBA/東芝
24+
65230
詢價
TOSHIBA
24+
TO-3P(H)IS
6540
原裝現(xiàn)貨/歡迎來電咨詢
詢價
TOSHIBA/東芝
2447
TO-3P
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
SANYO/三洋
23+
TO-3P
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
更多2SC54供應商 更新時間2025-4-5 10:00:00