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2SK3431

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.6m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.9m?MAX.(VGS=4V,ID=42A) ?LowCiss:Ciss=6100pFTY

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3431

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3431-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3431-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.6m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.9m?MAX.(VGS=4V,ID=42A) ?LowCiss:Ciss=6100pFTY

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3431-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.6m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.9m?MAX.(VGS=4V,ID=42A) ?LowCiss:Ciss=6100pFTY

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3431-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3431-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3432

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3432isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=4.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=6.9mΩMAX.(VGS=4V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3432

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3432isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=4.0m?MAX.(VGS=10V,ID=42A) RDS(on)2=6.9m?MAX.(VGS=4V,ID=42A) ?LowCiss:Ciss=9500pFTYP. ?Bui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3432

MOS Field Effect Transistor

Features Superlowon-stateresistance: RDS(on)1=4.0m?MAX.(VGS=10V,ID=42A) RDS(on)2=6.9m?MAX.(VGS=4V,ID=42A) LowCiss:Ciss=9500pFTYP. Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    2SK34

  • 功能描述:

    2SK34

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NEC
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20000
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3000
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1134+
TO220
150
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FujiSemiconductor
501
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TO-220
30980
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更多2SK34供應(yīng)商 更新時(shí)間2025-4-6 16:30:00