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2SK3433-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3433isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=26mΩMAX.(VGS=10V,ID=20A) RDS(on)2=41mΩMAX.(VGS=4.0V,ID=20A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3433-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3433isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=26m?MAX.(VGS=10V,ID=20A) RDS(on)2=41m?MAX.(VGS=4.0V,ID=20A) ?LowCiss:Ciss=1500pFTYP. ?Built-in

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3433-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3433isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=26mΩMAX.(VGS=10V,ID=20A) RDS(on)2=41mΩMAX.(VGS=4.0V,ID=20A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3434

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3434

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=10V,ID=24A) RDS(on)2=31m?MAX.(VGS=4.0V,ID=24A) ?LowCiss:Ciss=2100pFTYP. ?Built-ing

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3434

MOS Field Effect Transistor

Features ●Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=10V,ID=24A) RDS(on)2=31m?MAX.(VGS=4V,ID=24A) ●LowCiss:Ciss=2100pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3434-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=10V,ID=24A) RDS(on)2=31m?MAX.(VGS=4.0V,ID=24A) ?LowCiss:Ciss=2100pFTYP. ?Built-ing

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3434-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3434-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3434-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=10V,ID=24A) RDS(on)2=31m?MAX.(VGS=4.0V,ID=24A) ?LowCiss:Ciss=2100pFTYP. ?Built-ing

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    2SK34

  • 功能描述：

    2SK34

供應(yīng)商型號品牌批號封裝庫存備注價格
MIT
24+
3005
詢價
MITSUBISHI
2023+
to-92
8700
原裝現(xiàn)貨
 詢價
NEC
24+
SOT-263
211
原裝現(xiàn)貨假一罰十
 詢價
TOSHIBA
12+
十字架
2500
原裝現(xiàn)貨/特價
 詢價
HIT
23+
SOP28L
5000
原裝正品,假一罰十
 詢價
NEC
24+
TO263
20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅！！
 詢價
NEC
24+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
 詢價
NEC
24+
TO-263
90000
一級代理商進(jìn)口原裝現(xiàn)貨、價格合理
 詢價
MITSUBIS
23+
TO-57
350
專營高頻管模塊,全新原裝!
 詢價
FUJI原裝
24+
TO-220
30980
原裝現(xiàn)貨/放心購買
 詢價
更多2SK34供應(yīng)商 更新時間2025-4-6 16:30:00

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