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2SK3432-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3432isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=4.0m?MAX.(VGS=10V,ID=42A) RDS(on)2=6.9m?MAX.(VGS=4V,ID=42A) ?LowCiss:Ciss=9500pFTYP. ?Bui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3432-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3432isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=4.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=6.9mΩMAX.(VGS=4V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3432-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3432isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=4.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=6.9mΩMAX.(VGS=4V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3432-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3432isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=4.0m?MAX.(VGS=10V,ID=42A) RDS(on)2=6.9m?MAX.(VGS=4V,ID=42A) ?LowCiss:Ciss=9500pFTYP. ?Bui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3432-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3432isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=4.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=6.9mΩMAX.(VGS=4V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3433

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3433isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=26mΩMAX.(VGS=10V,ID=20A) RDS(on)2=41mΩMAX.(VGS=4.0V,ID=20A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3433

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3433isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=26m?MAX.(VGS=10V,ID=20A) RDS(on)2=41m?MAX.(VGS=4.0V,ID=20A) ?LowCiss:Ciss=1500pFTYP. ?Built-in

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3433

MOS Field Effect Transistor

Features ●Superlowon-stateresistance: RDS(on)1=26mMAX.(VGS=10V,ID=42A) RDS(on)2=41mMAX.(VGS=4V,ID=42A) ●LowCiss:Ciss=1500pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3433-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3433isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=26m?MAX.(VGS=10V,ID=20A) RDS(on)2=41m?MAX.(VGS=4.0V,ID=20A) ?LowCiss:Ciss=1500pFTYP. ?Built-in

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3433-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3433isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=26mΩMAX.(VGS=10V,ID=20A) RDS(on)2=41mΩMAX.(VGS=4.0V,ID=20A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SK34

  • 功能描述：

    2SK34

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MIT
24+
3005
詢價(jià)
MITSUBISHI
2023+
to-92
8700
原裝現(xiàn)貨
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TOSHIBA
12+
十字架
2500
原裝現(xiàn)貨/特價(jià)
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NEC
24+
SOT-263
211
原裝現(xiàn)貨假一罰十
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NEC
24+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
 詢價(jià)
NEC
24+
TO263
20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！
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HIT
23+
SOP28L
5000
原裝正品,假一罰十
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FUJI原裝
24+
TO-220
30980
原裝現(xiàn)貨/放心購(gòu)買
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SANYO
24+
SOT-89
5000
全現(xiàn)原裝公司現(xiàn)貨
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TOSHIBA
24+
SOT23
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
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更多2SK34供應(yīng)商 更新時(shí)間2025-4-6 16:30:00

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