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74HCT74集成電路（IC）的FIFO存儲器規(guī)格書PDF中文資料

廠商型號	74HCT74
參數(shù)屬性	74HCT74 封裝/外殼為16-SOIC（0.295"，7.50mm 寬）；包裝為托盤；類別為集成電路（IC）的FIFO存儲器；產(chǎn)品描述：IC FIFO REGISTER 64X4 3ST 16SOIC
功能描述	Dual D-type flip-flop with set and reset; positive edge-trigger
封裝外殼	16-SOIC（0.295"，7.50mm 寬）
文件大小	299.12 Kbytes
頁面數(shù)量	19 頁
生產(chǎn)廠商	Nexperia B.V. All rights reserved
企業(yè)簡稱	NEXPERIA【安世】
中文名稱	安世半導體(中國)有限公司官網(wǎng)
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二到原廠下載
更新時間	2025-2-12 9:59:00

1. General description

The 74HC74 and 74HCT74 are dual positive edge triggered D-type flip-flop. They have individual

data (nD), clock (nCP), set (nSD) and reset (nRD) inputs, and complementary nQ and nQ outputs.

Data at the nD-input, that meets the set-up and hold time requirements on the LOW-to-HIGH clock

transition, is stored in the flip-flop and appears at the nQ output. Schmitt-trigger action in the clock

input, makes the circuit highly tolerant to slower clock rise and fall times. Inputs include clamp

diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of

VCC.

2. Features and benefits

? Wide supply voltage range from 2.0 to 6.0 V

? CMOS low power dissipation

? High noise immunity

? Input levels:

? For 74HC74: CMOS level

? For 74HCT74: TTL level

? Symmetrical output impedance

? High noise immunity

? Balanced propagation delays

? Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

? Complies with JEDEC standards:

? JESD8C (2.7 V to 3.6 V)

? JESD7A (2.0 V to 6.0 V)

? ESD protection:

? HBM JESD22-A114F exceeds 2000 V

? MM JESD22-A115-A exceeds 200 V

? Multiple package options

? Specified from -40 °C to +85 °C and from -40 °C to +125 °C