BFP193W

Low Noise Silicon Bipolar RF Transistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz,NFmin=1dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available

BFP193W_14

Low Noise Silicon Bipolar RF Transistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz,NFmin=1dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available

BFP194

PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents)

PNPSiliconRFTransistor ●Forlowdistortionbroadbandamplifierinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA

BFP196

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

?Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA ?PoweramplifierforDECTandPCNsystems ?fT=7.5GHz F=1.5dBat900MHz

BFP196

NPN Silicon RF Transistor

NPNSiliconRFTransistor* ?Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA ?PoweramplifierforDECTandPCNsystems ?fT=7.5GHz,F=1.3dBat900MHz ?Pb-free(RoHScomp

BFP196W

NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPNSiliconRFTransistor ?Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA ?PoweramplifierforDECTandPCNsystems ?fT=7.5GHz F=1.5dBat900MHz

BFP196W

NPN Silicon RF Transistor

NPNSiliconRFTransistor* ?Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA ?PoweramplifierforDECTandPCNsystems ?fT=7.5GHz,F=1.3dBat900MHz ?Pb-free(RoHScomp

BFP196W

isc Silicon NPN RF Transistor

DESCRIPTION ?LowNoiseFigure NF=1.3dBTYP. @VCE=6V,IC=5mA,f=1GHz ?HighGain ︱S21︱2=18dBTYP. @VCE=6V,IC=30mA,f=1GHz ?MinimumLot-to-Lotvariationsforrobust deviceperformanceandreliableoperation APPLICATIONS ?Designedforuseinlownoise

BFP196WN

Low noise silicon bipolar RF transistor

Productdescription ?NPNsiliconplanarepitaxialtransistorin4-pindual-emitterSOT343packageforlownoiseandlowdistortionwidebandamplifiers.ThisRFtransistorbenefitsfromInfineonlong-termexperienceinRFcomponentsandcombinesease-of-usetostablevolumesproduction,atbenchm

BFP22

NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage)

NPNSiliconTransistorswithHighReverseVoltage ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Lowcapacitance ●Complementarytypes:BFP23,BFP26(PNP)