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BFP620FH7764

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor* ?HighgainlownoiseRFtransistor ?Smallpackage1.4x0.8x0.59mm ?OutstandingnoisefigureF=0.7dBat1.8GHz OutstandingnoisefigureF=1.3dBat6GHz ?Maximumstablegain Gms=21dBat1.8GHz Gma=10dBat6GHz ?Goldmetal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP640

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor ?HighgainlownoiseRFtransistor ?Providesoutstandingperformance forawiderangeofwirelessapplications ?IdealforCDMAandWLANapplications ?OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP640

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor ?HighgainlownoiseRFtransistor ?Providesoutstandingperformance forawiderangeofwirelessapplications ?IdealforCDMAandWLANapplications ?OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP640

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor ?HighgainlownoiseRFtransistor ?Providesoutstandingperformance forawiderangeofwirelessapplications ?IdealforCDMAandWLANapplications ?OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP640E6327

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor ?HighgainlownoiseRFtransistor ?Providesoutstandingperformance forawiderangeofwirelessapplications ?IdealforCDMAandWLANapplications ?OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP640F

NPN Silicon Germanium RF Transistor

ProductBrief TheBFP640FislinearverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCE=4.1VandcurrentsuptoIC=50mA

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP640FESD

Robust Low Noise Silicon Germanium Bipolar RF Transistor

ProductBrief TheBFP640FESDisaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4.1VandcurrentsuptoIC=50mA.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP640H6327

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor ?HighgainlownoiseRFtransistor ?Providesoutstandingperformance forawiderangeofwirelessapplications ?IdealforCDMAandWLANapplications ?OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP650

NPN Silicon Germanium RF Transistor

ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP650

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor Preliminarydata ?Forhighpoweramplifiers ?Idealforlowphasenoiseoscilators ?Maxim.availableGainGma=21dBat1.8GHz NoisefigureF=0.9dBat1.8GHz ?Goldmetallizationforhighreliability ?70GHzfT-SiliconGermaniumtechnology.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    BFP

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    NPN Silicon RF Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon/英飛凌
24+
SOT-343
163000
一級代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價格合理
 詢價
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
INFINEON/英飛凌
23+
SOT-343
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
Infineon/英飛凌
24+
20000
全新、原裝、現(xiàn)貨
 詢價
INFINEON/英飛凌
24+
NA/
9250
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
INFINEON/英飛凌
22+
SOT-343
20000
原裝現(xiàn)貨,實單支持
 詢價
ADI
23+
SOT-343
8000
只做原裝現(xiàn)貨
 詢價
ADI
23+
SOT-343
7000
詢價
英飛凌
25+
SOT-343
6000
原裝正品,假一罰十!
 詢價
VISHAY
24+
SOD323
6618
公司現(xiàn)貨庫存,支持實單
 詢價
更多BFP供應(yīng)商 更新時間2025-4-21 14:42:00

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