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BSS123L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BSS123L

MOSFETN-CHANNELPOWERMOSFET

DESCRIPTION TheBSS123L isavailableinSOT23package FEATURES ?AvailableinSOT23package

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

BSS123N

OptiMOS??Small-Signal-Transistor

Features ?N-channel ?Enhancementmode ?Logiclevel(4.5Vrated) ?Avalancherated ?QualifiedaccordingtoAECQ101 ?100lead-free;RoHScompliant,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123Q

N-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage HighDrain-SourceVoltageRating TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS123Qissuitableforautomotiveapplicat

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInp

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?HighDrain-SourceVoltageRating ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice,Note3and4

DIODES

Diodes Incorporated

BSS123W

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Description ThisN-channelenhancementmodefieldeffecttransistorisproducedusinghighcelldensity,trenchMOSFETtechnology.Thisproductminimizeson-stateresistancewhileprovidingrugged,reliableandfastswitchingperformance.Thisproductisparticularlysuitedforlow-voltage,low-c

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BSS123W

SOT-323Plastic-EncapsulateMOSFETS

FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS123W

N-ChannelEnhancementModeMOSFET

FUTUREWAFER

FutureWafer Tech Co.,Ltd

詳細參數(shù)

  • 型號：

    BSP123

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    MOSFET N-Channel 100V 0.37A Logic SOT223

供應商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
24+
標準封裝
7798
原廠渠道供應,大量現(xiàn)貨,原型號開票。
 詢價
INFINEON/英飛凌
24+
SOT-223
1050
只做原廠渠道 可追溯貨源
 詢價
infineon
12+
SOT-223
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
PHILIPS
23+
SOT223
12300
詢價
INFINEON
23+
80000
全新原裝的現(xiàn)貨
 詢價
INFINEON
23+
SOT223
7750
全新原裝優(yōu)勢
 詢價
INF
23+
SOT223-3
10140
原裝正品,假一罰十
 詢價
INFINEON
24+
SOT-223
36800
詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
infineon
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢
 詢價
更多BSP123供應商 更新時間2025-4-12 23:00:00

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