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CED1010AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,63A,RDS(ON)=9.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=14mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED1010L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,63A,RDS(ON)=9.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=13mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED1012

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED1012L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED10P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-8A,RDS(ON)=350mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED110P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-92A,RDS(ON)=6.0mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.0mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED1185

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V,3.4A,RDS(ON)=2.9W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED1188SA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V,6.8A,RDS(ON)=0.72W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED11N65S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED11P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-7A,RDS(ON)=270mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET
24+
TO-251
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢(xún)價(jià)
CET
23+
SOT-223
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
 詢(xún)價(jià)
CET
24+
TO-251
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢(xún)價(jià)
TOSHIBA/東芝
23+
TO-252
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢(xún)價(jià)
CET
07+PBF
SOT-223
6560
優(yōu)勢(shì)
 詢(xún)價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢(xún)價(jià)
CET
21+
SOT-223
6560
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
CET
23+
SOT-223
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
C
TO-251
22+
6000
十年配單,只做原裝
 詢(xún)價(jià)
CET/華瑞
21+
SOT-223
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢(xún)價(jià)
更多CED1供應(yīng)商 更新時(shí)間2025-4-2 10:20:00

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