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GT9926NW

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

GTC9926

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GTC9926E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GTS9926

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGTS9926providesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Features *Lowon-resistance *Capableof2.5Vgatedrive *Lowdrivecurrent

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GTS9926E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGTS9926Eprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Features *Lowon-resistance *Capableof2.5Vgatedrive *Lowdrivecurrent *Surfacemountpackage

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

H9926CS

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features ?RDS(on)=40m?@VGS=2.5V,ID=5.2A;RDS(on)=30m?@VGS=4.5V,ID=6A ?HighDensit

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H9926CTS

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features ?RDS(on)=40m?@VGS=2.5V,ID=5.2A;RDS(on)=30m?@VGS=4.5V,ID=6A ?HighDensit

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H9926S

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features ?RDS(on)=40m?@VGS=2.5V,ID=5.2A;RDS(on)=30m?@VGS=4.5V,ID=6A ?HighDensit

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H9926TS

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features ?RDS(on)=40m?@VGS=2.5V,ID=5.2A;RDS(on)=30m?@VGS=4.5V,ID=6A ?HighDensit

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

HM9926B

DualN-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

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