亚洲中文字幕在线最新不卡,天堂中文在线8最新版地址

<rt id="y3b6v"></rt>

<span id="y3b6v"><noframes id="y3b6v">

<rt id="y3b6v"><small id="y3b6v"></small></rt>

<tbody id="y3b6v"></tbody>

<label id="y3b6v"><xmp id="y3b6v">

首頁 >FSL>規(guī)格書列表

零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
FSL230R1	文件：45.65 Kbytes Page：8 Pages	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL230R3	文件：45.65 Kbytes Page：8 Pages	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL230R4	文件：45.65 Kbytes Page：8 Pages	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL234D	文件：46.03 Kbytes Page：8 Pages	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL234D1	文件：46.03 Kbytes Page：8 Pages	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL234D3	文件：46.03 Kbytes Page：8 Pages	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL234R	文件：46.03 Kbytes Page：8 Pages	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL234R1	文件：46.03 Kbytes Page：8 Pages	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL234R3	文件：46.03 Kbytes Page：8 Pages	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL234R4	文件：46.03 Kbytes Page：8 Pages	4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil

<<<1 2 3 4 567 8 9 10 11 >>>

詳細參數(shù)

型號：
FSL
功能描述：
汽車連接器 FIN MATE 5 SEC. LOCK
RoHS：
否
制造商：
Amphenol SINE Systems
產(chǎn)品：
Contacts
系列：
ATP
型式：
Female
觸點電鍍：
Nickel

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市華斯頓科技有限公司	FSL		25+23+	原廠原包	23976	絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨	詢價
深圳市旺財半導(dǎo)體有限公司	FSL		23+	BGA	16567	正品:QQ;2987726803	詢價
深圳市昌和盛利電子有限公司	FSLV16211MTD	Fairchild	23+	56-TSSOP	9526		詢價
深圳市勤思達科技有限公司	FSLPN60		12+	TO-263	15000	全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。	詢價
深圳市聯(lián)世界科技有限公司	FSLM2520-1R8JP2	TOKO	24+/25+		1570	原裝正品現(xiàn)貨庫存價優(yōu)	詢價
深圳市弘為電子有限公司	FSL05N2C	HONEY	24+	原廠封裝	2000	原裝現(xiàn)貨假一罰十	詢價
深圳市利加科技有限公司	FSLH137NYH	FSC	16+	DIP8	100	全新原裝現(xiàn)貨	詢價
深圳市益百分電子有限公司	FSL106MR	FAI	10+	DIP8	10	原裝現(xiàn)貨價格有優(yōu)勢量大可以發(fā)貨	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	FSLV16211GX_NL	原廠	23+	BGA54	25000	原裝正品,假一罰十	詢價
深圳市毅創(chuàng)騰電子科技有限公司	FSL126HR	FAIRCHILD		DIP8	2000	原裝長期供貨!	詢價

更多FSL供應(yīng)商更新時間2025-4-10 14:50:00

客戶服務(wù) 網(wǎng)站合作

Tel：+86-755-8246-9263
Email：114ic＠114ic.com
投訴建議：web＠114ic.com

Copyright ? 2003-2025 114ic.com All Rights Reserved 粵ICP備05011613號粵公網(wǎng)安備 44030402000933號