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1PS79SB30

Marking:G1;Package:SC-79;40 V, 0.2 A Schottky barrier diode

1.Generaldescription PlanarSchottkybarrierdiodewithanintegratedguardringforstressprotection,encapsulatedina SOD523(SC-79)ultrasmallSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Verylowforwardvoltage ?Verylowreversecurrent ?Guardringp

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

1PS79SB30-Q

Marking:G1;Package:SC-79;40 V, 0.2 A Schottky barrier diode

1.Generaldescription PlanarSchottkybarrierdiodewithanintegratedguardringforstressprotection,encapsulatedina SOD523(SC-79)ultrasmallSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Verylowforwardvoltage ?Verylowreversecurrent ?Guardringp

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BFS20

Marking:G1;Package:SOT23;NPN medium frequency transistor

FEATURES ?IC(max)=25mA ?VCEO(max)=20V ?Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS ?IFandVHFthickandthin-filmcircuitapplications. DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BFS20

Marking:G1;Package:SOT-23;EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

HIGHFREQUENCYAPPLICATION. VHFBANDAMPLIFIERAPPLICATION.

KECKEC CORPORATION

KEC株式會社

BFS20

Marking:G1;Package:SOT-23;NPN SILICON PLANAR VHF TRANSISTOR

PARTMARKINGDETAIL-G1

Zetex

Zetex Semiconductors

BZD27C68P

Marking:G1;Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

BZD27C68P

Marking:G1;Package:SOD-123FL;Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

BZT52H-A4V7

Marking:G1;Package:SOD123F;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1,±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BZT52H-A4V7-Q

Marking:G1;Package:SC-76;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1,±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

EMG1

Marking:G1;Package:SOT-553;NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)TwoDTC124EchipsinaEMTorUMTorSMTpackage.

ROHMRohm

羅姆羅姆半導體集團

晶體管資料

  • 型號:

    G10

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產廠家:

  • 制作材料:

    Si-N+R

  • 性質:

    表面帖裝型 (SMD)_差分放大器射極輸出 (Dual)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數:

    5

  • 可代換的型號:

    FMG10A,

  • 最大耗散功率:

  • 放大倍數:

  • 圖片代號:

    H-21

  • vtest:

    50

  • htest:

    999900

  • atest:

    0.05

  • wtest:

    0

產品屬性

  • 產品編號:

    G1

  • 制造商:

    MACOM Technology Solutions

  • 類別:

    RF/IF,射頻/中頻和 RFID > 衰減器

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 衰減值:

    36dB

  • 封裝/外殼:

    TO-8 形式,4 引線

  • 描述:

    ATTENUATOR

供應商型號品牌批號封裝庫存備注價格
HFS
23+
SOT23
99000
一級分銷商
詢價
10
優(yōu)勢庫存,全新原裝
詢價
NXP/恩智浦
23+
SOD-523
50000
全新原裝正品現貨,支持訂貨
詢價
M/A-COM Technology Solutions
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
MACOM
23+
NA
5000
公司只做原裝,可配單
詢價
NXP/恩智浦
23+
NA/
4714
原裝現貨,當天可交貨,原型號開票
詢價
YXYBDT/一芯源
20+21+
SOT-23
60000
原.現貨
詢價
ON/安森美
25+
SOT23
39000
原裝正品,假一罰十!
詢價
AOAGO
23+
SOT23-3
15000
全新原裝現貨,價格優(yōu)勢
詢價
NEOWAY
23+
6000
原裝正品假一罰百!可開增票!
詢價
更多G1供應商 更新時間2025-4-3 10:00:00