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GT40Q321

Voltage Resonance Inverter Switching Application

VoltageResonanceInverterSwitchingApplication ?Fifth-generationIGBT ?Enhancementmodetype ?Highspeed:tf=0.41μs(typ.)(IC=40A) ?Lowsaturationvoltage:VCE(sat)=2.8V(typ.)(IC=40A) ?FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40Q321

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40Q322

Voltage Resonance Inverter Switching Application

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40QR21

Discrete IGBTs Silicon N-Channel IGBT

Features 1.6.5thgeneration 2.TheRC-IGBTconsistsofafreewheelingdiodemonolithicallyintegratedinanIGBTchip. 3.Enhancementmode 4.High-speedswitching IGBT:tf=0.20μs(typ.)(IC=40A) FWD:trr=0.60μs(typ.)(IF=15A) 5.Lowsaturationvoltage:VC

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40T101

N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40T301

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

ParallelResonanceInverterSwitchingApplications ??????? ?FRDincludedbetweenemitterandcollector ?Enhancementmodetype ?HighspeedIGBT:tf=0.25μs(typ.)(IC=40A) FRD:trr=0.7μs(typ.)(di/dt=?20A/μs) ?Lowsaturationvoltage:VCE(sat)=3.7V(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40T302

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

ParallelResonanceInverterSwitchingApplications ?FRDincludedbetweenemitterandcollector ?Enhancementmode ?HighspeedIGBT:tf=0.23μs(typ.)(IC=40A) FRD:trr=0.7μs(typ.)(di/dt=?20A/μs) ?Lowsaturationvoltage:VCE(sat)=3.7V(typ.)(IC=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40T302

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40T321

Consumer Application Voltage Resonance Inverter Switching Application

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40T321

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號(hào):

    GT40

  • 功能描述:

    PNEUMATIC TURBINE VIBRATIORS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TOSHIBA
24+/25+
760
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
詢價(jià)
TOSHIBA
2015+
TO3P/TO247
19898
專業(yè)代理原裝現(xiàn)貨,特價(jià)熱賣!
詢價(jià)
TOS
24+
TO-3PL-3
8866
詢價(jià)
TOSHIBA
02+
TO-3P
1000
自己公司全新庫(kù)存絕對(duì)有貨
詢價(jià)
國(guó)產(chǎn)替代
2012
TO3PTO247
100000
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
詢價(jià)
TOSHIBA
23+
模塊
900
全新原裝正品,量大可訂貨!可開(kāi)17%增值票!價(jià)格優(yōu)勢(shì)!
詢價(jià)
TOS
16+
TO-3P
10000
全新原裝現(xiàn)貨
詢價(jià)
東芝
23+
3PL
1990
專業(yè)優(yōu)勢(shì)供應(yīng)
詢價(jià)
TOSHIBA
2020+
TO-3P
470
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
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TOSHIBA
23+
TO-3PL
5000
原裝正品,假一罰十
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更多GT40供應(yīng)商 更新時(shí)間2025-4-22 15:59:00