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IRF630

N-channelTrenchMOStransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF630

FIELDEFFECTPOWERTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF630

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF630

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF630

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導體

IRF630A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.333Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF630A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Thisdeviceisn-channel,enhancementmode,powerMOSFET designedespecia

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF630B

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?DesingedforhighefficiencyswitchingDC/DCconverters, switchmodepowersupplies,DC-ACconver

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingKersemiproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighe

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數

  • 型號：

    HI630AA

  • 制造商：

    Hubbell Wiring Device-Kellems

  • 功能描述：

    P-CORD, HI-IMPACT,6,BK,RJ45-RJ45,30'

供應商型號品牌批號封裝庫存備注價格
HI
2016+
BGA
1800
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
HI
24+
BGA
5000
全現原裝公司現貨
 詢價
HI
1844+
BGA
6852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
海思
22+
BGA
42469
原裝正品現貨
 詢價
海思
24+
BGA
6000
全新原裝正品現貨,假一賠佰
 詢價
海思
23+
BGA
30000
全新原裝,假一賠十,價格優(yōu)勢
 詢價
Hi
1351
BGA
234
普通
 詢價
HI
23+
BGA
50000
全新原裝正品現貨,支持訂貨
 詢價
HISILISON
22+
BGA
3255
全新原裝正品 現貨 假一罰十
 詢價
HI
24+
NA/
483
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
更多HI630AA供應商 更新時間2025-4-24 21:02:00

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