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IRF630B

N-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?DesingedforhighefficiencyswitchingDC/DCconverters, switchmodepowersupplies,DC-ACconver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF630B

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·FastSwitchingSpeed ·LowDriveRequirement ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·This

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF630F

N-channelmosfettransistor

?Features ·WithTO-220Fpackage ·Lowon-stateandthermalresistance ·Fastswitching ·VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ·1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF630FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630FI

iscN-ChannelMOSFETTransistor

?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?RDS(on)=0.4Ω ?6Aand200V ?singlepulseavalancheenergyrated ?SOAisPower-DissipationLimited ?LinearTransfer

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF630FP

N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630FP

N-channel200V-0.35廓-9ATO-220/TO-220FPMeshoverlay??IIPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630M

N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630M

N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630MFP

N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    HI630AA

  • 制造商：

    Hubbell Wiring Device-Kellems

  • 功能描述：

    P-CORD, HI-IMPACT,6,BK,RJ45-RJ45,30'

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HI
2016+
BGA
1800
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
HI
24+
BGA
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
HI
1844+
BGA
6852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
海思
22+
BGA
42469
原裝正品現(xiàn)貨
 詢價(jià)
海思
24+
BGA
6000
全新原裝正品現(xiàn)貨,假一賠佰
 詢價(jià)
海思
23+
BGA
30000
全新原裝,假一賠十,價(jià)格優(yōu)勢(shì)
 詢價(jià)
Hi
1351
BGA
234
普通
 詢價(jià)
HI
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
HISILISON
22+
BGA
3255
全新原裝正品 現(xiàn)貨 假一罰十
 詢價(jià)
HI
24+
NA/
483
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
 詢價(jià)
更多HI630AA供應(yīng)商 更新時(shí)間2025-4-24 21:02:00

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