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IRF630

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. Features *RepetitiveAvalancheRated *FastSwitching *EaseofParalleling *SimpleDriveRequirements

DCCOM

Dc Components

IRF630

N-channelmosfettransistor

Features ?WithTO-220package ?Lowon-stateandthermalresistance ?Fastswitching ?VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF630

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=9.0A)

Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParall

IRF

International Rectifier

IRF630

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF630

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinhighspeedswitching, uninterruptiblepowersupply,motorcontrol,audioamplifiers, industrialactuators. DC-DC&DC-ACconvertersfortelecom,industrialand consumerenvironment. Complianc

COMSET

Comset Semiconductor

IRF630

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF630

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF630areN-channelenhancementmodesilicongatepowerfieldeffecttransistors. Theyaredesigned,testedandguaranteedtowithstandlevelofenergyinbreakdownavalanchemadeofoperation. Theyaredesignedasanextremelyefficientandreliabledeviceforuseinawi

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF630

FIELDEFFECTPOWERTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF630

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    HI630AA

  • 制造商：

    Hubbell Wiring Device-Kellems

  • 功能描述：

    P-CORD, HI-IMPACT,6,BK,RJ45-RJ45,30'

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HI
2016+
BGA
1800
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
HI
24+
BGA
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
HI
1844+
BGA
6852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
海思
22+
BGA
42469
原裝正品現(xiàn)貨
 詢價(jià)
海思
24+
BGA
6000
全新原裝正品現(xiàn)貨,假一賠佰
 詢價(jià)
海思
23+
BGA
30000
全新原裝,假一賠十,價(jià)格優(yōu)勢(shì)
 詢價(jià)
Hi
1351
BGA
234
普通
 詢價(jià)
HI
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
HISILISON
22+
BGA
3255
全新原裝正品 現(xiàn)貨 假一罰十
 詢價(jià)
HI
24+
NA/
483
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
更多HI630AA供應(yīng)商 更新時(shí)間2025-4-24 21:02:00

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