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IRF530

PowerMOSFET(Vdss=100V,Rds(on)=0.16ohm,Id=14A)

IRF

International Rectifier

IRF530

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530

N??hannelEnhancement??odeSiliconGate

TMOSE?FET.?PowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain?to?sourcediodewithafastrecoverytime.Designedfo

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

IRF530

14.0A100VNCHANNELPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF530

14A,100V,0.160Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF530

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF530

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF530

TO-220-3LPlastic-EncapsulateMOSFETS

FEATURES LowRDS(on) VGSRatedat ± 20V SiliconGateforFastSwitchingSpeed Rugged LowDriveRequirements DESCRITION Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersupplies,UPS,ACandDC motorcontrols,relayandsolenoiddrivers.

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IBS530

  • 功能描述：

    Analog IC

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Inbisen(英彼森半導(dǎo)體)
23+
QFN-24
3035
900條運(yùn)算放大器 只做原裝現(xiàn)貨
 詢價(jià)
Phoenix/菲尼克斯
23/24+
2722386
7358
優(yōu)勢(shì)特價(jià) 原裝正品 全產(chǎn)品線技術(shù)支持
 詢價(jià)
24+
DIP
6430
原裝現(xiàn)貨/歡迎來(lái)電咨詢
 詢價(jià)
IBS
2020+
原包裝
6000
全新原裝正品現(xiàn)貨,假一賠佰
 詢價(jià)
IRC(TTElectronics)
新
713
全新原裝 貨期兩周
 詢價(jià)
IRC (TT Electronics)
2022+
709
全新原裝 貨期兩周
 詢價(jià)
IR
22+
SMD
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
SMD
8000
只做原裝現(xiàn)貨
 詢價(jià)
更多IBS530供應(yīng)商 更新時(shí)間2025-4-7 16:00:00

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