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IRF530N

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.09? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF530NL

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF530NL

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF530NL

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-262package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF530NLPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF530NPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF530NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF530NPBF

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IBS530

  • 功能描述：

    Analog IC

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Inbisen(英彼森半導(dǎo)體)
23+
QFN-24
3035
900條運(yùn)算放大器 只做原裝現(xiàn)貨
 詢價(jià)
Phoenix/菲尼克斯
23/24+
2722386
7358
優(yōu)勢(shì)特價(jià) 原裝正品 全產(chǎn)品線技術(shù)支持
 詢價(jià)
24+
DIP
6430
原裝現(xiàn)貨/歡迎來(lái)電咨詢
 詢價(jià)
IBS
2020+
原包裝
6000
全新原裝正品現(xiàn)貨,假一賠佰
 詢價(jià)
IRC(TTElectronics)
新
713
全新原裝 貨期兩周
 詢價(jià)
IRC (TT Electronics)
2022+
709
全新原裝 貨期兩周
 詢價(jià)
IR
22+
SMD
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
SMD
8000
只做原裝現(xiàn)貨
 詢價(jià)
更多IBS530供應(yīng)商 更新時(shí)間2025-4-7 16:00:00

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