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IRF1312L

HEXFET Power MOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters ?MotorControl ?Uninterru

IRF

International Rectifier

IRF1312LPBF

HEXFET Power MOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters ?MotorControl ?Uninterru

IRF

International Rectifier

IRF1312PBF

HEXFET Power MOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters ?MotorControl ?Uninterru

IRF

International Rectifier

IRF1312S

HEXFET Power MOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters ?MotorControl ?Uninterru

IRF

International Rectifier

IRF1312SPBF

HEXFET Power MOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters ?MotorControl ?Uninterru

IRF

International Rectifier

IRF132

N-Channel Power MOSFETs, 20 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF132

N-CHANNEL POWER MOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF132

High Power,High Speed Applications

DESCRIPTION ?DrainCurrentID=12A@TC=25℃ ?DrainSourceVoltage-:VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.25Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies ?UPS ?Motorcontrols ?Highenergypulsecircuits.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1324

N-Channel MOSFET Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.5m? ?Enhancementmode: ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1324LPBF

HEXFET Power MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
7000
詢價(jià)
IR
22+
TO-263
3000
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng)，一手貨源，原裝正品可零售！
 詢價(jià)
VishayVishay
NEW-
MOSFETs
100000
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) SMD-220 T/R
 詢價(jià)
IOR
23+24
TO263
28950
專營(yíng)原裝正品SMD二三極管,電源IC
 詢價(jià)
IR
22+
5230
36872339
原裝
 詢價(jià)
長(zhǎng)電
2015
TO-220-3L
40
詢價(jià)
ST
2018+
TO220
26976
代理原裝現(xiàn)貨/特價(jià)熱賣!
 詢價(jià)
更多IRF供應(yīng)商 更新時(shí)間2025-4-22 18:10:00

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