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IRF1324PBF

HEXFETPower MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowe

IRF

International Rectifier

IRF1324S-7PPBF

HEXFET Power MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

IRF

International Rectifier

IRF1324S-7PPBF

High Efficiency Synchronous Rectification in SMPS

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1324SPBF

HEXFET Power MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

IRF

International Rectifier

IRF1324STRL-7PP

High Efficiency Synchronous Rectification in SMPS

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

IRF

International Rectifier

IRF133

N-Channel Power MOSFETs, 20 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF133

N-CHANNEL POWER MOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導體

IRF140

High Power,High Speed Applications

DESCRIPTION ?DrainCurrentID=27A@TC=25℃ ?DrainSourceVoltage-:VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.085Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF140

N-CHANNEL POWER MOSFETS

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導體

IRF140

N-Channel Power MOSFETs, 27 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

詳細參數

  • 型號：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應商型號品牌批號封裝庫存備注價格
IR
22+
263
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
263
8000
專注配單,只做原裝進口現貨
 詢價
IR
23+
263
8000
專注配單,只做原裝進口現貨
 詢價
IR
23+
263
7000
詢價
IR
2016+
SOT-163
18070
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
IR
2015+
D-Pak
12500
全新原裝,現貨庫存長期供應
 詢價
IRF
4000一盤
13+
0
SOP8
 詢價
IR
25+23+
TO-263
36133
絕對原裝正品全新進口深圳現貨
 詢價
IR
24+
MICRO8
950
原裝現貨假一罰十
 詢價
IR/MOT
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
更多IRF供應商 更新時間2025-4-22 18:10:00

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