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IRF140

N-Channel Power MOSFETs, 27 A, 60-100V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF140

28A, 100V, 0.077 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF140

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.077ohm, Id=28A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

IRF140-143

N-Channel Power MOSFETs, 27 A, 60-100V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF1404

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRF1404

Advanced Process Technology Ultra Low On-Resistance

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404

isc N-Channel Mosfet Transistor

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1404L

Ultra Low On-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404L

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp

IRF

International Rectifier

IRF1404LPBF

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    IRF

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Inductors Epoxy Conformal Coated Uniform Roll Coated

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263
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終端可免費供樣,支持BOM配單
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23+
263
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19+
TO-220
75120
原廠代理渠道,每一顆芯片都可追溯原廠;
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IR
2016+
SOT-163
18070
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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25+
SOP8
3000
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MICRO8
950
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2015+
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12500
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24+
SOT
30617
主打XILINX品牌價格絕對優(yōu)勢
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更多IRF供應(yīng)商 更新時間2025-4-22 10:00:00