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IRFP254

HEXFET?PowerMOSFET

TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmoutinghole.Italsoprovidesgreatercreepagedistancebetweenpinstomee

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP254

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP254

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP254A

$GYDQFHG3RZHU026)(7

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowRDS(ON):0.108?(Typ.)

IRF

International Rectifier

IRFP254A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=25A@TC=25℃ ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP254B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP254N

PowerMOSFET(Vdss=250V,Rds(on)=125mohm,Id=23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP254N

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatthesePowerMOSFETsarewellknownfor,providesthedesign

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP254NPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP254NPBF

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatthesePowerMOSFETsarewellknownfor,providesthedesign

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
24+
TO-3
10000
詢價(jià)
IR
2015+
TO-3(鐵帽)
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
22+
TO-3
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-3
52746
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價(jià)
IR
23+
TO-3
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
TO-3
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
TO-3
7000
詢價(jià)
FAIR
23+
TO-3P
65480
詢價(jià)
FAIR
2023+環(huán)?，F(xiàn)貨
標(biāo)準(zhǔn)封裝
2500
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價(jià)
更多IRF254供應(yīng)商 更新時(shí)間2025-4-11 16:30:00

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