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IRF3710STRLPBF

AdvancedProcessTechnology

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710STRRPBF

HEXFET?PowerMOSFET

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRF3710Z

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3710Z

N-ChannelEnhancementModeMOSFET

Description TheIRF3710Zusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgat echarge.Itcanbeusedinawidevarietyof applications. GeneralFeatures VDS=100V,ID=60A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF3710ZGPBF

AdvancedProcessTechnology

VDSS=100V RDS(on)=18m? ID=59A Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimproved

IRF

International Rectifier

IRF3710ZL

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRF3710ZL

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710ZL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IRF3710STRLHR

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 100V 57A 3-Pin(2+Tab) D2PAK T/R

  • 功能描述：

    TRANS MOSFET N-CH 100V 57A 3PIN D2PAK - Tape and Reel

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
22+
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
7000
詢價(jià)
IR
2020+
TO263
174
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
IR
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
21+
TO263
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
2022
TO263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
IR
23+
NA/
89
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
IR
23+
TO-263
3200
絕對全新原裝!優(yōu)勢供貨渠道!特價(jià)!請放心訂購!
 詢價(jià)
更多IRF3710STRLHR供應(yīng)商 更新時間2025-3-21 14:00:00

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