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IRF530NSPBF

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NSPBF

Advanced Process Technology

IRF

International Rectifier

IRF530NSPBF_15

Advanced Process Technology

IRF

International Rectifier

IRF530NSTRLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NSTRRPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530PBF

Dynamicdv/dtRating,FastSwitching,EaseofParalleling,SimpleDriveRequirements

IRF

International Rectifier

IRF530PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530PBF

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF530R

N-ChannelPowerMOSFETsAvalancheEnergyRated

HARRIS

Harris Corporation

IRF530S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?Availablein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF530NSPBF

  • 功能描述：

    MOSFET 100V 1 N-CH HEXFET 90mOhms 24.7nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
15+
原廠原裝
8700
進(jìn)口原裝現(xiàn)貨假一賠十
 詢價
IR
24+
D2PAK-3
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗歡迎詢價
 詢價
IR
24+
TO-263
20
只做原廠渠道 可追溯貨源
 詢價
Infineon(英飛凌)
24+
D2PAK
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
DISCRETE
50
IR
8700
詢價
IR
17+
TO-263
6200
100%原裝正品現(xiàn)貨
 詢價
IR
2020+
TO263
20
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
IOR
24+
TO263
5000
只做原裝公司現(xiàn)貨
 詢價
更多IRF530NSPBF供應(yīng)商 更新時間2025-5-16 14:06:00

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