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IRF840L

Ease of Paralleling

VishayVishay Siliconix

威世科技威世科技半導體

IRF840LC

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I

VishayVishay Siliconix

威世科技威世科技半導體

IRF840LCL

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導體

IRF840LCL

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導體

IRF840LCL

Power MOSFET

FEATURES ?Ultralowgatecharge ?Reducedgatedriverequirement ?Enhanced30VVGSrating ?ReducedCiss,Coss,Crss ?Extremelyhighfrequencyoperation ?Repetitiveavalancherated ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th

VishayVishay Siliconix

威世科技威世科技半導體

IRF840LCL

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description ThisnewseriesoflowchargeHEXFET?powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem

IRF

International Rectifier

IRF840LCLPBF

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導體

IRF840LCPBF

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I

VishayVishay Siliconix

威世科技威世科技半導體

IRF840LCS

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導體

IRF840LCS

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRF840L

  • 功能描述：

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR/VISHAY
TO-220
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
VishayIR
24+
TO-262
151
詢價
IR
2016+
TO-262
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
IR
23+
TO-263
6000
專業(yè)優(yōu)勢供應
 詢價
IR
23+
TO-262
8650
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
IR
24+
TO-262
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
IR/VISHAY
22+
TO-220
20000
保證原裝正品,假一陪十
 詢價
VISHAY
1503+
TO-262
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
1923+
TO-262
6896
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價
IR/VISHAY
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
更多IRF840L供應商 更新時間2025-5-20 14:01:00

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