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IRFL110PBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRFL110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL110TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL110TRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL110TRPBF

N-Channel100-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRFL110TRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFM110A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFQ110

QUADN-CHANNELENHANCEMENTMOSFETS

SEME-LAB

Seme LAB

IRFR110

4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs

4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseadvancedpowerMOSFETsaredesignedforuse

Intersil

Intersil Corporation

IRFR110

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
SOT223
5000
只做原裝公司現(xiàn)貨
 詢價
IR
21+
SOT223
10000
原裝現(xiàn)貨假一罰十
 詢價
IR
22+
NEW
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
IR
23+
SOT223
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
SOT223
7000
詢價
IR
24+
SOT-223
36800
詢價
IR
22+
SOT-223
4500
全新原裝品牌專營
 詢價
I
2020+
SOT223-
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
IR
2023+環(huán)?，F(xiàn)貨
SOT-223
18000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價
I
23+
SOT223-
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
更多IRFL110NPBF供應(yīng)商 更新時間2025-3-15 10:20:00

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